Line width roughness effects on device performance

 
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Technological Educational Institute of Athens
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2010 (EN)
Line width roughness effects on device performance (EN)

Πάτσης, Γεώργιος (EL)
Γογγολίδης, Ευάγγελος (EL)
Κωνσταντούδης, Βασίλειος (EL)

N/A (EN)

The role of the gate width in the effects of Line Width Roughness (LWR) on transistor performance is investigated. Two mathematical results regarding the statistical nature of LWR are presented and discussed. Exploiting the implications of these results through a 2D modeling approach, we indicate that, for fixed LWR, transistors with large gate widths seem to mitigate the degradation effects of LWR on transistor performance. (EN)

conferenceItem
poster

Semiconductor device (EN)
Μικροηλεκτρονική (EN)
Microelectronics (EN)
Συσκευή ημιαγωγών (EN)

ΤΕΙ Αθήνας (EL)
Technological Educational Institute of Athens (EN)

27th International Conference on Microelectronics (EN)

English

2010-05-16

DOI: 10.1109/MIEL.2010.5490486

ΙΕΕΕ (EN)



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