Detailed resist film modeling in stochastic lithography simulation for line-edge roughness quantification

 
This item is provided by the institution :
Technological Educational Institute of Athens
Repository :
Ypatia - Institutional Repository
see the original item page
in the repository's web site and access all digital files if the item*
share




2010 (EN)
Detailed resist film modeling in stochastic lithography simulation for line-edge roughness quantification (EN)

Πάτσης, Γεώργιος (EL)
Δρυγιαννάκης, Δ. (EL)
Ράπτης, Ιωάννης (EL)

N/A (EN)

Modeling the lithography process with stochastic principles enables the consideration of resist material and process effects variability on critical dimensions and line-edge or line-width roughness of printed features. These principles are applied for a resist system where polymer and photo-acid-generator (PAG) are blended, and for the same system with the PAG molecules bonded on the main polymer chain. Three-dimensional chain-like models of resist and PAG are considered and examples of their effect on critical dimensions and on resist edge roughness are presented. Comparison with experimental results from the literature proves the validity of the current approach and suggests that it can be used for the prediction of the resist resolution and low roughness capabilities. (EN)

journalArticle

Molecular simulation (EN)
Μοριακή προσομοίωση (EN)
Λιθογραφία (EN)

ΤΕΙ Αθήνας (EL)
Technological Educational Institute of Athens (EN)

Microelectronic Engineering (EN)

English

2010-05

DOI: 10.1016/j.mee.2009.11.122

Elsevier (EN)



*Institutions are responsible for keeping their URLs functional (digital file, item page in repository site)