Etching behavior of Si-containing polymers as resist materials for bilayer lithography

 
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2003 (EN)
Etching behavior of Si-containing polymers as resist materials for bilayer lithography (EN)

Πάτσης, Γεώργιος Π. (EL)
Τσερέπη, Αγγελική Δ. (EL)
Γογγολίδης, Ευάγγελος (EL)
Κορδογιάννης, Γεώργιος (EL)
Κωνσταντούδης, Βασίλειος (EL)

Βαλαμόντες, Ευάγγελος Σ. (EL)
Cardinaud, Christophe (EN)
N/A (EN)
Cartry, Gilles (EN)
Turban, Guy (EN)
Eon, David (EN)
Peignon, Marie Claude (FR)

Line-edge roughness (LER) measurements of plasma-developed siloxane lines were carried out as a function of the radiation exposure dose and plasma development conditions. Results show that careful adjustment of the plasma process parameters is the determining factor in the patterning quality of dry developable bilayer resists with siloxane as the imaging layer. (EN)

journalArticle

Atomic force microscopy (EN)
Chemical modification (EN)
Χαρακτική στο πλάσμα (EN)
Lithography (EN)
Plasma etching (EN)
Συμβολομετρία (EN)
Μικροσκοπία Ατομικών Δυνάμεων (EN)
Λιθογραφία (EN)
Photoresists (EN)
Χημική τροποποίηση (EN)
Φωτοευαίσθητα υλικά (EN)
Interferometry (EN)

ΤΕΙ Αθήνας (EL)
Technological Educational Institute of Athens (EN)

Journal of Vacuum Science and Technology B (EN)

English

2003-01

DOI: 10.1116/1.1535929

American Institute of Physics (EN)



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