Effects of photoresist polymer molecular weight and acid-diffusion on line-edge roughness

 
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2005 (EN)
Effects of photoresist polymer molecular weight and acid-diffusion on line-edge roughness (EN)

Πάτσης, Γεώργιος (EL)
Γογγολίδης, Ευάγγελος (EL)
vanWerden, K. (EL)

N/A (EN)

Important factors contributing to line-edge roughness (LER) of chemically amplified resists are, among others, acid diffusion, and photoresist polymer molecular weight (MW). Their effects on the final LER are combined and simulations indicated that acid diffusion can be the major LER modifying factor. Acid-diffusion increases LER overall in a chemically amplified resist in comparison with a conventional one under the same deprotection fraction. In addition, extremely high values of acid-diffusion range can result in smaller LER for higher MW polymers. Under normal acid diffusion conditions, the effect MW on LER is seen to be of secondary importance. Explanations are given based on the critical ionization model for the resist film dissolution, and experimental verification is done with top-down scanning electron microscope (SEM) images for extreme-ultraviolet lithography (EUVL) photoresist. (EN)

journalArticle

Φωτοαντίσταση (EN)
Acid diffusion (EN)
Πολυμερισμός (EN)
Photoresistance (EN)
LER (EN)
Οξύ διάχυσης (EN)
Polymerization (EN)

ΤΕΙ Αθήνας (EL)
Technological Educational Institute of Athens (EN)

Japanese Journal of Applied Physics (EN)

English

2005-08-05

DOI: 10.1143/JJAP.44.6341

The Japan society of Applied Physics (EN)



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