Surface and line-edge roughness in plasma-developed resists

 
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2001 (EN)
Surface and line-edge roughness in plasma-developed resists (EN)

Βαλαμόντες, Ευάγγελος Σ. (EL)
Τέγκου, Ευαγγελία (EL)
Τσερέπη, Αγγελική Δ. (EL)
Γογγολίδης, Ευάγγελος (EL)
Ράπτης, Ιωάννης Α. (EL)

N/A (EN)

Silicon-containing, plasma-developed resists are characterised by surface (SR) and line-edge roughness (LER) measurements as functions of the exposure dose and plasma development conditions. Specifically, bilayer siloxane-based resists of different molecular weight distributions, and single-layer silylated chemically amplified resists are evaluated with measurements of SR and LER, while the results are compared with those of solution-developed chemically amplified resists. We show that plasma-developed systems can have low LER provided the resist material, the resist chemistry, and the processing conditions are chosen appropriately. (EN)

journalArticle

Plasma (EN)
Bilayer resists (EN)
LER (EN)
Suface roughness (EN)
Ανθεκτική διστοιβάδα (EN)
Line-edge roughness (EN)
Πλάσμα (EN)
Τραχύτητα επιφάνειας (EN)
SR (EN)

ΤΕΙ Αθήνας (EL)
Technological Educational Institute of Athens (EN)

Microelectronic Engineering (EN)

English

2001-09


Elsevier (EN)



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