Effects of photoresist polymer molecular weight on line-edge roughness and its metrology probed with Monte Carlo simulations

 
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2004 (EN)
Effects of photoresist polymer molecular weight on line-edge roughness and its metrology probed with Monte Carlo simulations (EN)

Πάτσης, Γεώργιος (EL)
Γογγολίδης, Ευάγγελος (EL)
Κωνσταντούδης, Βασίλειος (EL)

N/A (EN)

A fast 2D/3D resist dissolution algorithm based on the critical ionization model is used to quantify line-edge roughness and determine its relation to resist polymer molecular weight, the end-to-end distance and the radius of gyration, keeping acid effects off (i.e., minimal). The algorithm permits also simulations of line-edge roughness metrology by examining the effects of SEM measurement box length. (EN)

journalArticle

Φωτοαντίσταση (EN)
Scaling analysis (EN)
Ionization (EN)
Κλιμακωτή ανάλυση (EN)
LER (EN)
Ιονισμός (EN)

ΤΕΙ Αθήνας (EL)
Technological Educational Institute of Athens (EN)

Microelectronic Engineering (EN)

English

2004-09

DOI: 10.1016/j.mee.2004.06.005

Elsevier (EN)



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