Quantification of line-edge roughness of photoresists

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Technological Educational Institute of Athens
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2003 (EN)
Quantification of line-edge roughness of photoresists (EN)

Πάτσης, Γεώργιος (EL)
Τσερέπη, Αγγελική (EL)
Γογγολίδης, Ευάγγελος (EL)
Κωνσταντούδης, Βασίλειος (EL)

N/A (EN)

An off-line image analysis algorithm and software is developed for the calculation of line-edge roughness (LER) of resist lines, and is successfully compared with the on-line LER measurements. The effect of several image-processing parameters affecting the fidelity of the off-line LER measurement is examined. The parameters studied include the scanning electron microscopy magnification, the image pixel size dimension, the Gaussian noise-smoothing filter parameters, and the line-edge determination algorithm. The issues of adequate statistics and appropriate sampling frequency are also investigated. The advantages of off-line LER quantification and recommendations for the on-line measurement are discussed. Having introduced a robust algorithm for edge-detection in Paper I, Paper II [V. Constantoudis et al., J. Vac. Sci. Technol. B 21, 1019 (2003)] of this series introduces the appropriate parameters to fully quantify LER. (EN)


Image analysis (EN)
Photoresistors (EN)
Φωτοαντιστάσεις (EN)
Ανάλυση εικόνας (EN)

ΤΕΙ Αθήνας (EL)
Technological Educational Institute of Athens (EN)

Journal of Vacuum Science & Technology B (EN)



DOI: 10.1116/1.1570845

American Vacuum Society (EN)

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