Gel formation theory approach for the modelling of negative chemically amplified e-beam resists

 
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1997 (EN)
Gel formation theory approach for the modelling of negative chemically amplified e-beam resists (EN)

Πάτσης, Γεώργιος (EL)
Χατζάκης, Μιχαήλ (EL)
Ράπτης, Ιωάννης (EL)
Γλέζος, Νίκος (EL)
Αργείτης, Παναγιώτης (EL)

Αϊδίνης, Κωνσταντίνος (EL)
Gentili, Monica (EN)
N/A (EN)
Maggiora, R. (EN)

Gel formation theory is applied for the interpretation of experimental lithographic results of epoxy based negative e-beam resists. The success of different theoretical models in fitting experiments depends upon the value of concentration of the photoacid generator (PAG) and the thermal processing conditions. The chemical composition of each specific system, the sensitivity and the range of acid diffusion are important parameters in the analysis. It is concluded that existing theories with an appropriate interpretation explain satisfactorily experimental results in a given range of resist composition and processing parameters. However in some cases a model which would include more explicitly the reaction-diffusion mechanism is required. (EN)

journalArticle

Acid diffusion (EN)
Gels (EN)
Lithography (EN)
Διάχυση οξέων (EN)
Λιθογραφία (EN)
Τζελ (EN)
Applied physics (EN)
Εφαρμοσμένη φυσική (EN)

ΤΕΙ Αθήνας (EL)
Technological Educational Institute of Athens (EN)

Microelectronic Engineering (EN)

English

1997-02

DOI: 10.1016/S0167-9317(96)00178-5

Elsevier (EN)



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