Short-range order and microstructure in hydrogenated amorphous silicon

 
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1991 (EN)

Short-range order and microstructure in hydrogenated amorphous silicon (EN)

Savatinova, I (EN)
Pantchev, B (EN)
Danesh, P (EN)
Raptis, YS (EN)
Liarokapis, E (EN)

An experimental study has been made on the relationship between short-range order and microstructure in hydrogenated amorphous silicon films. The properties of the material have been varied by applying rf power of different magnitudes. The change in the short-range order has been characterized by Raman scattering measurements. Microstructure has been determined by means of field assisted ion exchange technique. The observed correlation between the two structural length scales suggests that the presence of dihydride groups in these materials is a key factor for the release of the silicon network strain. (EN)

journalArticle (EN)

RAMAN-SCATTERING (EN)
FILMS (EN)
ALLOYS (EN)
STRUCTURAL RELAXATION (EN)
ENERGY BARRIER (EN)
A-SI (EN)
GLOW-DISCHARGE (EN)
GE (EN)
Physics, Applied (EN)


Journal of Applied Physics (EN)

English

1991 (EN)

ISI:A1991FP40100039 (EN)
11 (EN)
69 (EN)
10.1063/1.347537 (EN)
0021-8979 (EN)
7656 (EN)
7659 (EN)

AMER INST PHYSICS (EN)




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