Modeling reactive sputtering process in symmetrical planar direct current magnetron systems

 
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1992 (EN)
Modeling reactive sputtering process in symmetrical planar direct current magnetron systems (EN)

Tsiogas, CD (EN)
Avaritsiotis, JN (EN)

N/A (EN)

A steady-state model for the reactive sputtering process in a symmetrical planar magnetron configuration is presented which takes the specific system geometry into consideration. Further to the simulation of the well known hysteresis effect and its consequences in the composition of the deposited film, the model allows for the calculation of the radial film thickness and compositional distributions of the growing film as a function of the distance between the target and the condensation surface. The proposed model introduces for the first time two realistic assumptions: a reactive gas profile across the reaction zone and a current density distribution. The case of introducing reactive gas through the center of the magnetron surface is also examined and the effects on the stoichiometry of the film as well as on the stability of the system are presented. Experimental results for film thickness profile for several values of the target diameter-to-substrate separation ratio show excellent agreement with simulated results. (EN)

journalArticle

DEPOSITION RATE (EN)
PARTIAL-PRESSURE (EN)
THIN-FILM STOICHIOMETRY (EN)
TITANIUM NITRIDE (EN)
FLOW (EN)

Εθνικό Μετσόβιο Πολυτεχνείο (EL)
National Technical University of Athens (EN)

Journal of Applied Physics (EN)

English

1992


AMER INST PHYSICS (EN)



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