Optical studies of ZnSe-ZnS GaAs(100) single quantum wells grown by photo-assisted vapor phase epitaxy

 
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1995 (EN)
Optical studies of ZnSe-ZnS GaAs(100) single quantum wells grown by photo-assisted vapor phase epitaxy (EN)

Tishchenko, VV (EN)
Raptis, YS (EN)
Bondar, NV (EN)
Anastassakis, E (EN)

N/A (EN)

Confinement effects of phonon and excitonic modes in two monolayers-thickness ZnSeZnS single quantum wells (SQWs) grown through photo-assisted vapor phase epitaxy (PAVPE) have been investigated by means of Raman, photoluminescence (PL) and reflection spectroscopy. It has been found that the frequency of the SQW longitudinal optical (LO) phonon mode is red shifted by 2.1 cm-1 relative to the LO phonon frequency of bulk ZnSe. This shift has been attributed to the combined opposite action of strain and confinement effects. The PL data have shown that the 1s state of the n = 1 subband heavy-hole (hh) excitonic band is blue shifted by 188 meV relative to the energy of free excitons in the bulk material. Largely responsible for this shift is the quantum confinement of electrons and holes. In addition, the transitions involving the 2s state of the hh excitons have been clearly observed. The 2s-1s energy splitting was found to be 38 meV. From this result, the binding energy of the 1shh exciton has been estimated to be 44 meV. © 1995. (EN)

journalArticle

Band structure (EN)
C. optical properties (EN)
Subband heavy hole excitonic band (EN)
Phonons (EN)
Photoluminescence (EN)
Semiconducting zinc compounds (EN)
B. epitaxy (EN)
Frequencies (EN)
Raman spectroscopy (EN)
Photo assisted vapor phase epitaxy (EN)
Vapor phase epitaxy (EN)
Excitonic modes (EN)
Zinc selenide (EN)
Excitons (EN)
Semiconducting gallium arsenide (EN)
Single quantum wells (EN)
Semiconductor quantum wells (EN)
Optical properties (EN)
Monolayers (EN)
Longitudinal optical phonon mode (EN)
A. quantum wells (EN)
Epitaxial growth (EN)

Εθνικό Μετσόβιο Πολυτεχνείο (EL)
National Technical University of Athens (EN)

Solid State Communications (EN)

1995


PERGAMON-ELSEVIER SCIENCE LTD (EN)



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