A new planar device based on Seebeck effect for gas sensing applications
(EN)
Papadopoulos, CA
(EN)
Avaritsiotis, JN
(EN)
Vlachos, DS
(EN)
A new planar sensor structure has been developed, which takes advantage of the differential temperature appearing between the two halves of a tin or an indium oxide film, one half of which is covered with a catalyst, in the presence of a combustible gas. Since the rates of reaction of the combustible gas on the two halves of the film are expected to be different, different amounts of heat are delivered at the two halves of the film, resulting in a temperature gradient across the film. According to the Seebeck effect, this temperature gradient produces a voltage difference at the two edges of the film. Different Seebeck voltage values have been recorded when the structure is exposed to various gases, due to the different heat of adsorption or combustion delivered from each gas at the two portions of the film.
(EN)
