A Si 1.8 GHz RLC filter with tunable center frequency and quality factor

 
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Journal part (EN)
Scientific article (EN)
1996 (EN)
A Si 1.8 GHz RLC filter with tunable center frequency and quality factor (EN)
Pipilos, S (EN)
Papananos, Y (EN)
Fenk, J (EN)
Tsividis, YP (EN)
A second-order active bandpass filter using integrated inductors was implemented in Si bipolar technology. The filter uses special techniques to make the quality factor and the center frequency tunable. For a nominal center frequency of 1.8 GHz and a quality factor of 35, the filter has 1 dB compression dynamic range of 40 dB, and draws 8.7 mA from a 2.8 V supply. (EN)
journalArticle (EN)
Second Order (EN)
Tunable center frequency (EN)
Engineering, Electrical & Electronic (EN)
Bandpass filters (EN)
Spurious signal noise (EN)
Dynamic Range (EN)
Electric inductors (EN)
Electric resistance (EN)
Bipolar semiconductor devices (EN)
Frequency tuning (EN)
Quality factor (EN)
Electric variables measurement (EN)
Parasitic capacitances (EN)
Bandpass Filter (EN)
Quality Factor (EN)
Mathematical models (EN)
Semiconducting silicon (EN)
Electric impedance (EN)
National Technical University of Athens
Digital Library of National Technical University of Athens | Dspace@NTUA
Κεντρική Βιβλιοθήκη Ε.Μ.Π.
Ιδρυματικό Αποθετήριο
Δημοσιεύσεις μελών Δ.Ε.Π. σε περιοδικά
IEEE Journal of Solid-State Circuits (EN)
English
1996 (EN)
http://hdl.handle.net/123456789/11748
1524 (EN)
10.1109/4.540064 (EN)
ISI:A1996VM45300024 (EN)
0018-9200 (EN)
1517 (EN)
31 (EN)
10 (EN)
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC (EN)



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