Static current-voltage characteristics of silicon n+-i-n+ resistors at liquid helium temperatures

 
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1996 (EN)
Static current-voltage characteristics of silicon n+-i-n+ resistors at liquid helium temperatures (EN)

Glezos, N (EN)
Tsamakis, D (EN)

N/A (EN)

The behaviour of the (I-V) characteristics is investigated in n(+)-i-n(+) highly compensated Si resistors at temperatures 4.2-45K. The conduction mechanisms are discussed in detail here. The prebreakdown and breakdown regions of I-V characteristics were simulated by a one-dimensional model including the evidence of impurity high compensation and freeze out effects as well as the shallow-dopants impact ionisation by the injected hot carriers into the base. Negative resistance (S-type) phenomena are also observed on the characteristics for high injection current densities. (EN)

journalArticle

Resistors (EN)
Liquid helium temperatures (EN)
Semiconductor devices (EN)
Electron transport properties (EN)
Negative resistance (EN)
Hot carriers (EN)
Current voltage characteristics (EN)
Low temperature effects (EN)
Silicon on insulator technology (EN)
current-voltage characteristic (EN)
Current Density (EN)
Freeze out effects (EN)
High injection current densities (EN)
i-v characteristic (EN)
Semiconductor device models (EN)
Semiconducting silicon (EN)
Silicon resistors (EN)
Current density (EN)

Εθνικό Μετσόβιο Πολυτεχνείο (EL)
National Technical University of Athens (EN)

Journal De Physique. IV : JP (EN)

1996


EDITIONS PHYSIQUE (EN)



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