Static current-voltage characteristics of silicon n+-i-n+ resistors at liquid helium temperatures
(EN)
Glezos, N
(EN)
Tsamakis, D
(EN)
The behaviour of the (I-V) characteristics is investigated in n(+)-i-n(+) highly compensated Si resistors at temperatures 4.2-45K. The conduction mechanisms are discussed in detail here. The prebreakdown and breakdown regions of I-V characteristics were simulated by a one-dimensional model including the evidence of impurity high compensation and freeze out effects as well as the shallow-dopants impact ionisation by the injected hot carriers into the base. Negative resistance (S-type) phenomena are also observed on the characteristics for high injection current densities.
(EN)
