A modelocked semiconductor laser for a polarized electron source

 
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1997 (EN)
A modelocked semiconductor laser for a polarized electron source (EN)

Ciarrocca, M (EN)
Avramopoulos, H (EN)
Papanicolas, CN (EN)

N/A (EN)

We have constructed a prototype compact laser system based on GaAlAs semiconductor diodes. It has been designed specifically to be used with strained GaAs type photocathodes as a source for CW electron accelerators. It produces pulses of picosecond duration, at a repetition rate that can be set anywhere between 0.3 and 3 GHz. The system operates at average powers up to 150 mW, and the semiconductors that are presently installed emit at a wavelength of 847 nm with a 4 nm tuning range, though these can be easily substituted to give a 70 nm tuning range. (EN)

journalArticle

Pulsed laser applications (EN)
Pulse repetition rate (EN)
Injection (EN)
Laser tuning (EN)
Photocathodes (EN)
Tuning range (EN)
Particle accelerators (EN)
Semiconductor lasers (EN)
Laser resonators (EN)
Polarized electron source (EN)
Semiconducting gallium arsenide (EN)
Laser (EN)
Electron sources (EN)
Polarized electrons (EN)
Laser pulses (EN)

Εθνικό Μετσόβιο Πολυτεχνείο (EL)
National Technical University of Athens (EN)

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment (EN)

1997


ELSEVIER SCIENCE BV (EN)



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