Measurement and modeling of the anomalous dynamic response of high resistivity diodes at cryogenic temperatures

 
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1997 (EN)
Measurement and modeling of the anomalous dynamic response of high resistivity diodes at cryogenic temperatures (EN)

Misiakos, K (EN)
Tsamakis, D (EN)
Tsoi, E (EN)

N/A (EN)

A negative dynamic conductance and a negative dynamic capacitance were observed when a high resistivity (10 kΩ cm) silicon p/i/n diode is based in the double injection regime at liquid helium temperatures. At high frequencies (above 100 kHz) the negative capacitance varies as l/ω2 while the negative conductance exhibits a more complex behavior and, eventually changes sign at even higher frequencies (1 MHz). A quantitative model is presented which accounts for the conductance and capacitance behavior as a function of frequency and bias. The model is based on the shallow donor impact ionization and carrier trapping at the ionized donors. Additionally the breakdown voltage of the static I-V characteristics is used to calculate the unintentional compensation in the high resistivity substrate. © 1997 Elsevier Science Ltd. (EN)

journalArticle

Charge carriers (EN)
Low temperature operations (EN)
High Frequency (EN)
Cryogenic temperatures (EN)
Impact Ionization (EN)
Semiconductor diodes (EN)
Current voltage characteristics (EN)
Electric conductivity of solids (EN)
Substrates (EN)
Anomalous dynamic responses (EN)
Electric breakdown of solids (EN)
Cryogenics (EN)
Breakdown Voltage (EN)
i-v characteristic (EN)
Capacitance (EN)
Semiconductor device models (EN)
Ionization of solids (EN)
Semiconducting silicon (EN)
Semiconductor doping (EN)
Dynamic Response (EN)

Εθνικό Μετσόβιο Πολυτεχνείο (EL)
National Technical University of Athens (EN)

Solid-State Electronics (EN)

1997


N/A (EN)



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