Photoluminescence of porous silicon prepared from crystallized a-Si:H films

 
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1998 (EN)
Photoluminescence of porous silicon prepared from crystallized a-Si:H films (EN)

Savatinova, I (EN)
Bedikjan, L (EN)
Danesh, P (EN)
Liarokapis, E (EN)

N/A (EN)

Preparation of porous silicon films from undoped hydrogenated amorphous silicon is demonstrated. Light emission was observed only in the cases when the precursor material was crystallized and chemically etched. The amount of crystallinity of the films was varied by annealing at 850 degrees C for different times ranging from 1 to 120 min. The crystallinity of the annealed and etched samples was measured by micro-Raman spectroscopy. The photoluminescence spectra were measured at room temperature, using a mercury lamp as an excitation source. The correlation between the amount of crystallinity and the photoluminescence features has been studied. It has been established that neither the crystallinity nor the photoluminescence features vary with annealing durations between 26 and 120 min. (C) 1998 Elsevier Science B.V. All rights reserved. (EN)

journalArticle

78.30 Gt (EN)
Annealing (EN)
Crystallization (EN)
Photoluminescence (EN)
Amorphous silicon (EN)
Etching (EN)
Crystallinity (EN)
Micro Raman spectroscopy (EN)
78.55 (EN)
Raman spectroscopy (EN)
Hydrogenation (EN)
Thin films (EN)
Semiconducting films (EN)
Amorphous films (EN)
Semiconducting silicon (EN)
Porous silicon (EN)
Crystal structure (EN)

Εθνικό Μετσόβιο Πολυτεχνείο (EL)
National Technical University of Athens (EN)

Journal of Non-Crystalline Solids (EN)

1998


ELSEVIER SCIENCE BV (EN)



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