1. Home page
  2. Search

A contribution to GaN HEMT modeling and parameter extraction including temperature dependence

This item is provided by the institution :
Technical University of Crete   

Repository :
Institutional Repository Technical University of Crete   

see the original item page
in the repository's web site and access all digital files if the item*



A contribution to GaN HEMT modeling and parameter extraction including temperature dependence (EN)
Μακρης Νικολαος (EL)
Χεβας Λουκας (EL)
Bucher Matthias (EL)
Kostopoulos Athanasios (EN)
Makris Nikolaos (EN)
Konstantinidis George (EN)
Stavrinidis Antonios (EN)
Chevas Loukas (EN)
Bucher Matthias (EN)
Kayambaki Maria (EN)
short paper
conferenceItem
2022
The increased usage of high electron mobility transistors (HEMTs), especially using GaN, for a large range of applications demands for efficient circuit design models. The paper discusses the procedures for determining key parameters of a physics-based HEMT model for circuit design. HEMTs using AlGaN/GaN epitaxy on Si substrate fabricated at IESL-FORTH are used. Basic parameters such as barrier capacitance, threshold voltage, slope factor, and mobility are determined from experimental characteristics over a large range of temperature. It is shown that the behavior of HEMTs, in terms of transconductance efficiency, is in many ways similar to that of MOSFETs. (EN)
High electron mobility transistor (EN)
HEMT (EN)
Mobility (EN)
Threshold voltage (EN)
Transconductance (EN)
English
Institute of Electrical and Electronics Engineers (EN)
Πολυτεχνείο Κρήτης (EL)
Technical University of Crete (EN)
Technical University of Crete
Institutional Repository Technical University of Crete
School of Production Engineering and Management - Master Theses



*Institutions are responsible for keeping their URLs functional (digital file, item page in repository site)