Milhailescu, INVaseashta, AAntoniadou, M.Κομπίτσας, ΜιχάληςHotovy, I.Stamataki, M.Fasaki, I.Giannoudakos, A.Rehacek, V.Roubani-Kalantzopoulou, F.A multitude of industries use H-2 either as part of their process or as a fuel. All these applications motivate nowadays the development of hydrogen sensor devices which enable its safe and controlled use. Since H-2 is explosive above the lower explosion limit at 40,000 ppm, devices which permit the detection of its presence and measure its concentration become indispensable. In this work, we present a microsensor based on NiO thin films produced with dc reactive magnetron sputtering on GaAs, with an incorporated Pt heater, all on a DO-8 package ready for use. The microsensor was tested to H-2 concentrations 5,000 and 10,000 ppm at different working temperatures. The change of the electrical resistance of NiO thin films was the signal for hydrogen sensing. The response of the sensor was not proportional to concentration of the gas neither to the working temperature.DordrechtAdobe PDF379-3821871-465Xhttps://hdl.handle.net/10442/1263610.1007/978-1-4020-8903-9_35ISBN: 978-1-4020-8901-5engSpringer© SPRINGER© SPRINGERNATO Advanced Study Institute on Functionalized Nanoscale Materials, Devices and Systems for Chem-Bio Sensors, Photonics and Energy Gereration and Storage, Sinaia, ROMANIA, Functionalized Nanoscale Materials, Devices and Systems, 2007-06-04 - 2007-06-15NiOgas sensorsBiophysicsH-2Physics, AppliedHYDROGEN MICROSENSOR BASED ON NIO THIN FILMSΑνακοίνωση σε συνέδριο2008ΦυσικήPhysical sciencesFrascati 42Άρθρο συνεδρίουConference articleΕθνικό Ίδρυμα Ερευνών (ΕΙΕ)Greek Aggregator OpenArchives.gr | National Documentation Centre (EKT)