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A study of the response of depleted type p-MOSFETs to electron dose

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A study of the response of depleted type p-MOSFETs to electron dose (EN)
O'Sullivan, D.
Sarrabayrouse, G.
Zamani, M.
Siskos, S.
Laopoulos, T.
Konstantakos, v.
Benton, E.
Fragopoulou, M.
Stoulos, S.
info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
2019-03-08
The p-MOSFET dosimeter studied in this work has been manufactured at LAAS- CNRS Laboratory in Toulouse France, for applications in personal and space dosimetry. They are proposed for proton, heavy ions and electron and photon dose measurements. The current study investigates the sensitivity of this new type of Metal-Oxide-Semiconductor field effect transistor (MOSFET) to electrons. The sensitivity of the new MOSFET based dosemeters to electrons is linear for wide dose ranges. The influence of the electrons energy on the dosemeters response is also investigated. (EN)
Annual Symposium of the Hellenic Nuclear Physics Society
English
Hellenic Nuclear Physics Society (HNPS) (EN)
2654-0088
2654-007X
Annual Symposium of the Hellenic Nuclear Physics Society; Τόμ. 21 (2013): HNPS2013; 84-91 (EL)
HNPS Advances in Nuclear Physics; Vol. 21 (2013): HNPS2013; 84-91 (EN)
Πνευματική ιδιοκτησία (c) 2019 M. Fragopoulou, S. Stoulos, M. Zamani, E. Benton, D. O'Sullivan, S. Siskos, T. Laopoulos, v. Konstantakos, G. Sarrabayrouse (EL)
Hellenic Nuclear Physics Society
Annual Symposium of the Hellenic Nuclear Physics Society
Oral contributions



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