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ZnO thin films prepared by pulsed laser deposition

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ZnO thin films prepared by pulsed laser deposition
Panagopoulos, C. N.
Κομπίτσας, Μιχάλης
Fasaki, I.
Tsoutsouva, M. G.
Papadimitriou, D.
Άρθρο σε επιστημονικό περιοδικό
2011-04-15
Zinc oxide (ZnO) thin films were deposited on soda lime glass substrates by pulsed laser deposition (PLD) in an oxygen-reactive atmosphere. The structural, optical, and electrical properties of the as-prepared thin films were studied in dependence of substrate temperature and oxygen pressure. High quality poly-crystalline ZnO films with hexagonal wurtzite structure were deposited at substrate temperatures of 100 and 300 degrees C. The RMS roughness of the deposited oxide films was found to be in the range 2-9 nm and was only slightly dependent on substrate temperature and oxygen pressure. Electrical measurements indicated a decrease of film resistivity with the increase of substrate temperature and the decrease of oxygen pressure. The ZnO films exhibited high transmittance of 90% and their energy band gap and thickness were in the range 3.26-3.30 eV and 256-627 nm, respectively.
AMSTERDAM
Φυσική (EL)
Επιστήμη (Γενικά) (EL)
Τεχνολογία (Γενικά) (EL)
Technology (General) (EN)
Science (General) (EN)
Physics (EN)
Electrical properties
Zinc oxide thin films
Optical
Materials Science, Multidisciplinary
Structural
Physics, Condensed Matter
Pulsed laser deposition
English
Elsevier S.A.
Materials Science and Engineering B (formerly Part of Materials Science and Engineering)
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© 2010 Elsevier B.V. All rights reserved.
© 2010 Elsevier B.V. All rights reserved. (EN)
National Hellenic Research Foundation (NHRF)
Helios - Repository of the National Hellenic Research Foundation (NHRF)



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