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Oxygen Contamination of Multilayer TiNx — SiO2 — Si Structures found by Resonant RBS Analysis

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Hellenic Nuclear Physics Society   

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Oxygen Contamination of Multilayer TiNx — SiO2 — Si Structures found by Resonant RBS Analysis (EN)
Aslanoglou, X. A.
Kriembardis, G.
Kaliampakos, G.
Evangelou, E.
Dimitriades, Ch.
Konofaos, N.
Kossionides, E.
info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
2020-02-01
Multi layer structures consisting of TiN — SÌO2 — Si layers operating as MOS devices were constructed and tested for their electrical properties. RBS and resonance reaction analysis were performed for the characterisation of the structure of the devices. The results show a correlation between the structure found by RBS and the electrical performance of the devices. (EN)
Annual Symposium of the Hellenic Nuclear Physics Society
English
Hellenic Nuclear Physics Society (HNPS) (EN)
2654-0088
2654-007X
Annual Symposium of the Hellenic Nuclear Physics Society; Τόμ. 10 (1999): HNPS1999; 20-25 (EL)
HNPS Advances in Nuclear Physics; Vol. 10 (1999): HNPS1999; 20-25 (EN)
Πνευματική ιδιοκτησία (c) 2019 X. A. Aslanoglou, E. Evangelou, N. Konofaos, Ch. Dimitriades, E. Kossionides, G. Kaliampakos, G. Kriembardis (EL)
Hellenic Nuclear Physics Society
Annual Symposium of the Hellenic Nuclear Physics Society



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