Electron beam lithography simulation for the patterning of extreme ultraviolet masks

 
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Technological Educational Institute of Athens
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2008 (EN)
Electron beam lithography simulation for the patterning of extreme ultraviolet masks (EN)

Quesnel, E. (EL)
Πάτσης, Γεώργιος (EL)
Ράπτης, Ιωάννης (EL)
Τσικρικάς, Ν. (EL)
Gerardino, Annamaria (EN)

N/A (EN)

Extreme ultraviolet lithography (EUVL) mask is a complex multilayer stack, fabricated with electron-beam lithography. Detailed understanding of the scattering events and energy loss mechanism of the electron beam within this stack is mandatory due to the high accuracy requirements of the fabrication process. Simulation of electron-beam lithography is performed incorporating the details of the mask material-stack and the metrological information of the final layout is quantified. The effect of the Mo–Si multilayer of the EUVL mask blank on the deposited energy in the resist film is investigated. Simulation of complex layout containing features of various sizes down to 100 nm reproduced experimental metrology trends on the fine features of the layout. (EN)

journalArticle

Particle beams (EN)
Διάχυση ενέργειας (EN)
Energy dissipation (EN)
Δέσμες σωματιδίων (EN)
Multilayer substrates (EN)
Πολυστρωματικά υποστρώματα (EN)
Applied physics (EN)
Εφαρμοσμένη φυσική (EN)

ΤΕΙ Αθήνας (EL)
Technological Educational Institute of Athens (EN)

Japanese Journal of Applied Physics (EN)

English

2008

DOI: 10.1143/JJAP.47.4909

N/A (EN)



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