Pattern matching, simulation, and metrology of complex layouts fabricated by electron beam lithography

 
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Technological Educational Institute of Athens
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2007 (EN)
Pattern matching, simulation, and metrology of complex layouts fabricated by electron beam lithography (EN)

Πάτσης, Γεώργιος (EL)
Δρυγιαννάκης, Δ. (EL)
Ράπτης, Ιωάννης (EL)
Τσικρικάς, Ν. (EL)
Gerardino, Annamaria (EN)

Βογιατζής, Ε. (EL)
Σταυρουλάκης, Σ. (EL)
N/A (EN)

Validation of design rules taking into account fine details such as line-edge roughness, and full chip layout simulation for design inconsistencies, before actual fabrication, are among the main objectives of current software assisted metrology tools. Line-edge roughness quantification should accompany critical dimension (CD) measurements since it could be a large fraction of the total CD budget. A detailed simulation and metrology approach of line-edge roughness quantification versus the length scales in a layout are presented in this work using a combination of electron beam simulation for the exposure part, and stochastic simulations for the modeling of resist film, postexposure bake, and resist dissolution. The method is applied also on a test layout with critical dimension of 200nm and the resulted simulation and scanning electron microscopy images are compared with the aid of a pattern matching algorithm which enables the identification of the desired layout for metrology on a complex layout containing many printed features. (EN)

journalArticle

Microprocessor chips (EN)
Τσιπ μικροεπεξεργαστή (EN)
Νανοτεχνολογία (EN)
Nanotechnology (EN)
Δέσμη ηλεκτρονίων (EN)
Εφαρμοσμένη φυσική (EN)
Applied physics (EN)

ΤΕΙ Αθήνας (EL)
Technological Educational Institute of Athens (EN)

Journal of Vacuum Science & Technology B (EN)
JVSTB (EN)

English

2007-12-10

DOI: 10.1116/1.2798714

American Vacuum Society (EN)



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