20th International Microprocesses and Nanotechnology Conference, MNC 2007
(EN)
The effect of the number of layers of the Mo/Si structure and their relative thickness in terms of incident electron energy, on the backscattering coefficient and on the deposited energy in the resist film for a EUV mask is investigated. Experimental single pixel and test layout exposures on various Mo/Si stacks are in progress. Simulation accuracy improvement through the incorporation of secondary electrons and comparison of the simulation results with the corresponding experimental ones is in progress.
(EN)
Electrical engineering
**N/A**-Τεχνολογία
http://zbw.eu/stw/descriptor/18426-4
Electron backscattering
Electron beam lithography
Αναδιάχυση ηλεκτρονίων
Molybdenum
Τεχνολογία
**N/A**-Ηλεκτρολογία Μηχανολογία
Nanopatterning
Μολυβδαίνιο
Ηλεκτρολογία Μηχανολογία
Technology
Λιθογραφία ηλεκτρονικής δέσμης
Silicon
Πυρίτιο
http://id.loc.gov/authorities/subjects/sh85133147
IEEE
(EN)
http://ieeexplore.ieee.org/
Αναφορά Δημιουργού-Μη Εμπορική Χρήση-Όχι Παράγωγα Έργα 3.0 Ηνωμένες Πολιτείες
