Stochastic simulation of material and process effects on the patterning of complex layouts

 
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2007 (EN)
Stochastic simulation of material and process effects on the patterning of complex layouts (EN)

Κόκκορης, Γεώργιος (EL)
Πάτσης, Γεώργιος (EL)
Δρυγιαννάκης, Δ. (EL)
Ράπτης, Ιωάννης (EL)
Τσικρικάς, Ν. (EL)

Γογγολίδης, Ευάγγελος (EL)
N/A (EN)

The whole process of stochastic lithography simulation combined with an electron-beam simulation module, could be useful in the validation of design rules taking into account fine details such as line-edge roughness, and for simulating the layout before actual fabrication for design inconsistencies. Material and process parameters can no more be considered of second order importance in high-density designs. Line-width roughness quantification should accompany CD measurements since it could be a large fraction of the total CD budget. An example of the effects of exposure, material and processes on layouts are presented in this work using a combination of electron beam simulation for the exposure part, stochastic simulations for the modeling of resist film, the post-exposure bake, resist dissolution, and a simple analytic model for resist etching. Particular examples of line-width roughness and critical dimension non-uniformity due to, material, and process effects on the gate of a standard CMOS inverter layout are presented. (EN)

conferenceItem
poster

Parameter estimation (EN)
Electron beams (EN)
Lithography (EN)
Δέσμες ηλεκτρονίων (EN)
Λιθογραφία (EN)
Προσδιορισμός παραμέτρων (EN)
Applied physics (EN)
Εφαρμοσμένη φυσική (EN)

ΤΕΙ Αθήνας (EL)
Technological Educational Institute of Athens (EN)

Metrology, Inspection, and Process Control for Microlithography XXI (EN)

English

2007-02-25

DOI: 10.1117/12.708858

SPIE (EN)



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