Practical aspects for the use of plasma emission monitoring in reactive magnetron sputtering processes

 
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Journal part (EN)
Scientific article (EN)
1994 (EN)
Practical aspects for the use of plasma emission monitoring in reactive magnetron sputtering processes (EN)
Avaritsiotis, J (EN)
Kagarakis, C (EN)
Tsiogas, C (EN)
The sensitivity of Plasma Emission Monitoring (PEM) depends on both target material and oxygen mass flow at least for indium and tin target. Optical emission intensity and cathode voltage were recorded for several argon and oxygen flows in various tin and indium oxide thin film fabrication experiments, with the magnetron working in constant current mode. The results obtained indicate marked differences between indium and tin targets, as far as their reactive sputtering behaviour is concerned. A theoretical explanation is proposed for the observed target voltage variations with increasing oxygen mass flow in relation to the corresponding optical emission intensities. © 1994. (EN)
journalArticle (EN)
Magnetron Sputtering (EN)
Oxygen (EN)
Indium oxide thin films (EN)
Materials Science, Multidisciplinary (EN)
Reactive magnetron sputtering (EN)
Control systems (EN)
Cathode voltage (EN)
Physics, Applied (EN)
Thin films (EN)
Oxygen flows (EN)
Plasma emission monitoring (PEM) (EN)
Light emission (EN)
Plasma diagnostics (EN)
Magnetron sputtering (EN)
Tin oxide thin films (EN)
Target oxidation (EN)
Monitoring (EN)
National Technical University of Athens
Digital Library of National Technical University of Athens | Dspace@NTUA
Κεντρική Βιβλιοθήκη Ε.Μ.Π.
Ιδρυματικό Αποθετήριο
Δημοσιεύσεις μελών Δ.Ε.Π. σε περιοδικά
Vacuum (EN)
English
1994 (EN)
http://hdl.handle.net/123456789/11319
45 (EN)
12 (EN)
1186 (EN)
0042-207X (EN)
ISI:A1994PU78200004 (EN)
10.1016/0042-207X(94)90078-7 (EN)
1181 (EN)
PERGAMON-ELSEVIER SCIENCE LTD (EN)



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