LIGHT-EMISSION FROM SILICON NANOSTRUCTURES PRODUCED BY CONVENTIONAL LITHOGRAPHIC AND REACTIVE ION ETCHING TECHNIQUES
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GRIGOROPOULOS, S
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PAPADIMITRIOU, D
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NASSIOPOULOS, AG
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GOGOLIDES, E
(EN)
Sub-ten nanometer diameter silicon pillars and silicon walls of the same thickness are Fabricated by using conventional optical lithography based on deep-UV exposure and reactive ion etching using fluorine only containing gases. The produced structures are studied for their luminescence properties. Visible photoluminescence with a peak in the range 580 to 650 nm is observed under Ar laser irradiation.
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