LIGHT-EMISSION FROM SILICON NANOSTRUCTURES PRODUCED BY CONVENTIONAL LITHOGRAPHIC AND REACTIVE ION ETCHING TECHNIQUES

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Title

LIGHT-EMISSION FROM SILICON NANOSTRUCTURES PRODUCED BY CONVENTIONAL LITHOGRAPHIC AND REACTIVE ION ETCHING TECHNIQUES (EN)

Creator

GRIGOROPOULOS, S (EN)

PAPADIMITRIOU, D (EN)

NASSIOPOULOS, AG (EN)

GOGOLIDES, E (EN)

Type

journalArticle (EN)

Partial document
Publication in journal (EN)

Article
Scientific article (EN)

Issued

2014-03-01T01:11:09Z

1995 (EN)

Year

1995 (EN)

Description

Sub-ten nanometer diameter silicon pillars and silicon walls of the same thickness are Fabricated by using conventional optical lithography based on deep-UV exposure and reactive ion etching using fluorine only containing gases. The produced structures are studied for their luminescence properties. Visible photoluminescence with a peak in the range 580 to 650 nm is observed under Ar laser irradiation. (EN)

Scientific field

Physics, Condensed Matter (EN)

Natural Sciences ▶ Physical sciences
Condensed Matter Physics (EN)

Subject

Reactive Ion Etching (EN)

FABRICATION (EN)

Journal

PHYSICA STATUS SOLIDI B-BASIC RESEARCH (EN)

Language

English

Publisher

AKADEMIE VERLAG GMBH (EN)