Formulation of a holistic model for the kinetics of steady state growth of porous anodic alumina films

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Formulation of a holistic model for the kinetics of steady state growth of porous anodic alumina films (EN)

Patermarakis, G (EN)
Masavetas, K (EN)
Chandrinos, J (EN)

journalArticle (EN)

2014-03-01T01:26:22Z
2007 (EN)


A holistic model for the kinetics of steady state growth of porous anodic alumina films in oxalic acid, H2C2O4, solution was developed not necessarily requiring the adoption of any 'a priori' mechanism of porous film growth. By this model the effect of anodising conditions on the transport numbers of Al3+ cations and O2- anions across the barrier layer was revealed. The cation (anion) transport number decreased (increased) with current density, increased (decreased) with temperature and was unaffected by the concentration of electrolyte or pH. A complementary atomistic-ionic kinetic model was developed that fully justified these results and showed that the activation distances of Al3+ and O2- transport are comparable, but the activation energy of Al3+ transport is lower mainly due to the much smaller size of Al3+. The validity of the model was tested on the basis of SEM observations, while structural features and the rate of pore wall dissolution were determined. © Springer-Verlag 2007. (EN)

Electrochemistry (EN)

Growth rate (EN)
Porous materials (EN)
Al anodising (EN)
Carboxylic acids (EN)
Steady state (EN)
Positive ions (EN)
Solid state ionic transport (EN)
Anodic alumina films (EN)
Film growth (EN)
Porous anodic films (EN)
Negative ions (EN)
Oxalic acid (EN)
Holistic kinetic model (EN)
Kinetic models (EN)
Reaction kinetics (EN)
Alumina (EN)

Journal of Solid State Electrochemistry (EN)

Αγγλική γλώσσα

SPRINGER (EN)




*Η εύρυθμη και αδιάλειπτη λειτουργία των διαδικτυακών διευθύνσεων των συλλογών (ψηφιακό αρχείο, καρτέλα τεκμηρίου στο αποθετήριο) είναι αποκλειστική ευθύνη των αντίστοιχων Φορέων περιεχομένου.