Electrical properties of magnetron sputtered amorphous carbon films with sequential sp(3)-rich/sp(2)-rich layered structure

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Title

Electrical properties of magnetron sputtered amorphous carbon films with sequential sp(3)-rich/sp(2)-rich layered structure (EN)

Creator

Panayiotatos, Y (EN)

Logothetidis, S (EN)

Hastas, NA (EN)

Dimitriadis, CA (EN)

Papadimitriou, D (EN)

Tassis, DH (EN)

Type

journalArticle (EN)

Τμήμα έκδοσης
Publication in journal (EN)

Άρθρο
Scientific article (EN)

Issued

2014-03-01T01:51:09Z

2001 (EN)

Year

2001 (EL)

Description

The electrical properties of thick amorphous carbon (a-C) films with sequential sp(3)-rich/sp(2)-rich layered structure, grown by magnetron sputtering on Si substrates at room temperature, were investigated. At low electric fields, the conduction is due to the variable range hopping mechanism. At high electric fields, thermally assisted band-to-band indirect tunneling is the dominant conduction mechanism, while the Arrhenius plots of the current show a deviation from straight lines in the form of continuous bending satisfying the Meyer-Nelder rule. Comparative studies of low-frequency noise in sp(2)-rich single layer and sp(3)-rich/sp(2)-rich layered a-C films indicate that the noise in the a-C layered originates from traps located mainly at the interfaces of the sp(3)-rich/sp(2)-rich bilayers. (C) 2001 American Institute of Physics. (EN)

Scientific field

Physics, Applied (EN)

Φυσικές Επιστήμες ▶ Φυσική
Applied Physics (EN)

Subject

MECHANISM (EN)

Journal

APPLIED PHYSICS LETTERS (EN)

Language

English

Publisher

AMER INST PHYSICS (EN)

Provider