On the Electronic Structure of H-Ng-Ng-F (Ng = Ar, Kr, Xe) and the Nonlinear Optical Properties of HXe2F

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On the Electronic Structure of H-Ng-Ng-F (Ng = Ar, Kr, Xe) and the Nonlinear Optical Properties of HXe2F

Παπαδόπουλος, Μάνθος Γ.
Li, J.
Serrano-Andres, L.
Avramopoulos, A.

Άρθρο σε επιστημονικό περιοδικό

2010-11


The electronic ground state of H-Ng-Ng-F (Ng = Ar, Kr, Xe) has been studied theoretically by employing the ab initio complete active space valence bond (CASVB) and multistate complete active space perturbation theory (MS-CASPT2) methods. Both levels of theory confirm the diradicaloid character (DC) of the HNg(2)F ground state, increasing in the order Ar > Kr > Xe. The very significant effect of the first and, even more, the second Xe atom on the (hyper)polarizabilities has been shown and interpreted. Thus, the present results demonstrate a mechanism for producing very large (hyper)polarizabilities.
Washington

Φυσική (EL)
Χημεία (Γενικά) (EL)
Chemistry (General) (EN)
Physics (EN)

Physics, Atomic, Molecular & Chemical
Chemistry, Physical

English

American Chemical Society


Journal of Chemical Theory and Computation

© AMER CHEMICAL SOC
© AMER CHEMICAL SOC (EN)




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