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MOCVD Cobalt Oxide Deposition from Inclusion Complexes: Decomposition Mechanism, Structure, and Properties

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MOCVD Cobalt Oxide Deposition from Inclusion Complexes: Decomposition Mechanism, Structure, and Properties
Karayianni, H. S.
Tsakiridis, P. E.
Hristoforou, E.
Σαραντοπούλου, Ευαγγελία
Papadopoulos, N. D.
Perraki, M.
Άρθρο σε επιστημονικό περιοδικό
2011
A novel precursor based on the inclusion complex of beta-cyclodextrin with CoI(2) is proposed for the deposition of cobalt oxide films by metallorganic chemical vapor deposition (MOCVD). Deposition is viable through an abnormal behavior of the inclusion molecules during heating. A decomposition mechanism based on experimental results is proposed, while the films are examined in terms of microstructure, electrical, and magnetic properties. A uniform, nanocrystalline structure of Co(3)O(4) was revealed, along with impurities of silicide phases. The films presented a semiconducting behavior and minor in-plane magnetization.
Pennington
Χημεία (Γενικά) (EL)
Επιστήμη (Γενικά) (EL)
Τεχνολογία (Γενικά) (EL)
Technology (General) (EN)
Science (General) (EN)
Chemistry (General) (EN)
Materials Science, Coatings & Films
Electrochemistry
English
Electrochemical Society Incorporated
Journal of the Electrochemical Society
© 2010 The Electrochemical Society.
© 2010 The Electrochemical Society. (EN)
National Hellenic Research Foundation (NHRF)
Helios - Repository of the National Hellenic Research Foundation (NHRF)



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