High resolution patterning and simulation on Mo/Si multilayer for EUV masks

 
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2008 (EN)
High resolution patterning and simulation on Mo/Si multilayer for EUV masks (EN)

Gerardino, Annamaria (EL)
Πάτσης, Γεώργιος (EL)
Ράπτης, Ιωάννης (EL)
Τσικρικάς, Ν. (EL)

N/A (EN)

Electron Beam writing process is essential for EUV mask manufacturing and direct writing. Electron beam lithography simulation tools can provide critical information in the way of obtaining high accuracy results. In the present work a software tool which performs e-beam writing simulation, resist development simulation and automated metrology has been developed and applied in the case of Mo/Si multilayer substrates. Simulation results are compared with experimental ones in order to evaluate the simulation's accuracy. (EN)

conferenceItem
poster

Υπεριώδεις ακτίνες (EN)
Ultraviolet rays (EN)
Electron beams (EN)
Δέσμες ηλεκτρονίων (EN)
Metrology (EN)
Μετρολογία (EN)

ΤΕΙ Αθήνας (EL)
Technological Educational Institute of Athens (EN)

24th European Mask and Lithography Conference (EN)

English

2008-01-21

DOI: 10.1117/12.798804

SPIE (EN)



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