Line edge roughness investigation on chemically amplified resist materials with masked helium ion beam lithography

 
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2004 (EN)
Line edge roughness investigation on chemically amplified resist materials with masked helium ion beam lithography (EN)

Zeininger, Michalea (EN)
Fallmann, Wolfgang (EN)
Loeschner, Hans (EN)
Eder-Kapl, Stefan (EN)
Kirch, Oliver (EN)

Πάτσης, Γεώργιος (EL)
Γογγολίδης, Ευάγγελος (EL)
Κωνσταντούδης, Βασίλειος (EL)
N/A (EN)

We conducted line edge roughness (LER) measurements on resists with various sensitivities, exposed with a 75 keV 1:1 masked ion beam lithography tool. The critical dimension measurement data were treated with an algorithm for separation of mask induced roughness from random LER. The scaling analysis approach provided the correlation length and the roughness exponent. The results indicate that for exposure doses >2.5 μC/cm2 LER is not governed by shot noise but by the resist material properties (sensitivity, molecular weight, acid diffusion length) and development conditions. (EN)

journalArticle

Ανάλυση διακύμανσης (EN)
Ήλιο (EN)
Δέσμη ιόντων (EN)
LER (EN)
Ion beam (EN)
ΜΙκροηλεκτρονική (EN)
Microelectronics (EN)
Analysis of variance (EN)

ΤΕΙ Αθήνας (EL)
Technological Educational Institute of Athens (EN)

Microelectronic Engineering (EN)

English

2004-06

DOI: 10.1016/j.mee.2004.02.049

Elsevier (EN)



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