Elastic distortions of strained layers grown epitaxially in arbitrary directions

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Title

Elastic distortions of strained layers grown epitaxially in arbitrary directions (EN)

Creator

Anastassakis, E (EN)

Type

journalArticle (EN)

Partial document
Publication in journal (EN)

Article
Scientific article (EN)

Issued

2014-03-01T01:08:21Z

1991 (EN)

Year

1991 (EN)

Description

We consider the elastic distortions which are due to lattice mismatch between epitaxial layers and substrates. The growth is assumed to take place in an arbitrary crystallographic direction. Explicit forms are obtained for the deformation of the unit cell and its two components, i.e., the angular distortions (symmetric strain) and the rigid-body rotation (antisymmetric strain). The correction factors which connect the relaxed lattice constants of the layer with observables from X-ray diffractometry are obtained in analytical forms. As shown through specific applications, the results agree with those obtained numerically in the literature. © 1991. (EN)

Scientific field

Crystallography (EN)

Natural Sciences ▶ Chemical sciences
Crystallography (EN)

Subject

Films--Strain (EN)

Mathematical Techniques--Matrix Algebra (EN)

Elastic Distortion (EN)

Crystals (EN)

Elasticity (EN)

X-Rays--Diffraction (EN)

Journal

Journal of Crystal Growth (EN)