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Epitaxy and structural characterization of ZnSeTe layers grown on InP substrates

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National Technical University of Athens   

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Epitaxy and structural characterization of ZnSeTe layers grown on InP substrates (EN)
Pohl, UW (EN)
Raptis, YS (EN)
Strassburg, M (EN)
Kontos, AG (EN)
journalArticle (EN)
2014-03-01T01:18:57Z
2003 (EN)
ZnSeTe epilayers were grown on InP substrates with and without ZnCdSe buffer layers. Structural X-ray and Raman characterization results indicate a large range of Se composition in the epilayers. The introduction of a buffer layer and the control of the growth conditions improve the structure by limiting compositional variations close to the stoichiometric value where lattice matching conditions are met. Effects of plastic strain relaxation are thereby minimized. (C) 2002 Elsevier Science B.V. All rights reserved. (EN)
Crystallography (EN)
Stoichiometry (EN)
A1. Stresses (EN)
Semiconducting zinc compounds (EN)
Lattice constants (EN)
A3. Metalorganic vapor phase epitaxy (EN)
A1. Characterization (EN)
A1. Raman (EN)
A1. X-ray diffraction (EN)
Substrates (EN)
Strain (EN)
X ray diffraction analysis (EN)
Relaxation processes (EN)
B1. Tellurites (EN)
Raman scattering (EN)
Epitaxial growth (EN)
B2. Semiconductor ternary compounds (EN)
Semiconducting indium phosphide (EN)
Plastic strain (EN)
Crystal structure (EN)
Journal of Crystal Growth (EN)
English
ELSEVIER SCIENCE BV (EN)
National Technical University of Athens
Digital Library of National Technical University of Athens | Dspace@NTUA
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