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MOCVD cobalt oxide deposition from inclusion complexes: Decomposition mechanism, structure, and properties

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National Technical University of Athens   

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MOCVD cobalt oxide deposition from inclusion complexes: Decomposition mechanism, structure, and properties (EN)
Tsakiridis, PE (EN)
Perraki, M (EN)
Sarantopoulou, E (EN)
Karayianni, HS (EN)
Hristoforou, E (EN)
Papadopoulos, ND (EN)
journalArticle (EN)
2014-03-01T01:36:18Z
2011 (EN)
A novel precursor based on the inclusion complex of beta-cyclodextrin with CoI2 is proposed for the deposition of cobalt oxide films by metallorganic chemical vapor deposition (MOCVD). Deposition is viable through an abnormal behavior of the inclusion molecules during heating. A decomposition mechanism based on experimental results is proposed, while the films are examined in terms of microstructure, electrical, and magnetic properties. A uniform, nanocrystalline structure of Co3O4 was revealed, along with impurities of silicide phases. The films presented a semiconducting behavior and minor in-plane magnetization. (c) 2010 The Electrochemical Society. (EN)
Materials Science, Coatings & Films (EN)
Electrochemistry (EN)
Organometallics (EN)
Silicides (EN)
Metallorganic chemical vapor deposition (EN)
Cobalt oxides (EN)
Decomposition (EN)
Decomposition mechanism (EN)
Cobalt compounds (EN)
Abnormal behavior (EN)
MOCVD (EN)
Semiconducting behavior (EN)
Cobalt (EN)
Cobalt oxide films (EN)
Semiconducting films (EN)
Nano-crystalline structures (EN)
Oxide films (EN)
In-plane magnetization (EN)
Novel precursors (EN)
Inclusion complex (EN)
Electric properties (EN)
Magnetic properties (EN)
Journal of the Electrochemical Society (EN)
English
ELECTROCHEMICAL SOC INC (EN)
National Technical University of Athens
Digital Library of National Technical University of Athens | Dspace@NTUA
Κεντρική Βιβλιοθήκη Ε.Μ.Π.
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