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Etching of SiO2 and Si in fluorocarbon plasmas: A detailed surface model accounting for etching and deposition

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National Technical University of Athens   

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Etching of SiO2 and Si in fluorocarbon plasmas: A detailed surface model accounting for etching and deposition (EN)
Gogolides, E (EN)
Boudouvis, AG (EN)
Vauvert, P (EN)
Kokkoris, G (EN)
Turban, G (EN)
journalArticle (EN)
2014-03-01T01:49:52Z
2000 (EN)
A surface model is presented for the etching of silicon (Si) and silicon dioxide (SiO2) in fluorocarbon plasmas. Etching and deposition are accounted for using a generalized concept for the "polymer surface coverage," which is found to be equivalent to a normalized fluorocarbon film thickness covering the etched surfaces. The model coefficients are obtained from fits to available beam experimental data, while the model results are successfully compared with high-density plasma etching data. (C) 2000 American Institute of Physics. [S0021-8979(00)02521-4]. (EN)
Physics, Applied (EN)
ENERGY-DEPENDENCE (EN)
FILM DEPOSITION (EN)
TEMPERATURE (EN)
FLUORINATED SILICON (EN)
PRESSURE SF6 PLASMA (EN)
IONS (EN)
MECHANISMS (EN)
SIMULATOR (EN)
CHF3 (EN)
FREE-RADICALS (EN)
JOURNAL OF APPLIED PHYSICS (EN)
English
AMER INST PHYSICS (EN)
National Technical University of Athens
Digital Library of National Technical University of Athens | Dspace@NTUA
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