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An infrared investigation of the 887 cm-1 band in Cz-Si

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An infrared investigation of the 887 cm-1 band in Cz-Si
Fytros, L.G. Georgiou, G.J. Londos, C.A. Emtsev, V.V.
scientific_publication_article
Επιστημονική δημοσίευση - Άρθρο Περιοδικού (EL)
Scientific publication - Journal Article (EN)
1999
We report on infrared studies of the 887cm-1 band arising in silicon, subjected to neutron irradiation with subsequent thermal anneals. Deconvolution of this band indicates the presence of two peaks: a strong one at 887cm-1 and a weak one at 884cm-1. The 887cm-1 peak is, generally, attributed to the VO2 defect. We have tentatively correlated the 884cm-1 peak to a [VO2 + V] defect structure. Theoretical calculations of the vibrational frequencies of the two defects support the above hypothesis. The new picture for the 887cm-1 band, could account for the exhibited uniaxial-stress behaviour. © 1999 Elsevier Science B.V. All rights reserved. (EN)
English
Ερευνητικό υλικό ΕΚΠΑ
https://creativecommons.org/licenses/by-nc/4.0/
University of Athens
Pergamos Digital Library
Journal Article



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