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Degradation of polycrystalline silicon TFTs due to alpha particles irradiation stress

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Degradation of polycrystalline silicon TFTs due to alpha particles irradiation stress
Michalas, L. Papaioannou, G.J. Voutsas, A.T.
scientific_publication_article
Επιστημονική δημοσίευση - Άρθρο Περιοδικού (EL)
Scientific publication - Journal Article (EN)
2010
The degradation mechanism of poly-Si TFTs due to alpha particles irradiation is investigated. The tested devices exhibit increase in the density of interface states and grain boundaries traps proportional to the radiation fluence, ΔN/N0=KF. The irradiation introduced defects are responsible for the degradation of major device parameters, such as the threshold voltage, the subthreshold swing, the leakage current and the ON mobility and current. Their degradation is found to obey the same law. The analysis of the thermally activated parameters reveals that the irradiation induced defects are lying deep in the semiconductor band gap. Moreover the negative threshold voltage shift is associated to positively charged oxygen vacancies in the gate insulator, called E′ centers. © 2010 Elsevier Ltd. All rights reserved. (EN)
English
Ερευνητικό υλικό ΕΚΠΑ
https://creativecommons.org/licenses/by-nc/4.0/
University of Athens
Pergamos Digital Library
Journal Article



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