A reactive sputtering process model for symmetrical planar diode systems

 
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A reactive sputtering process model for symmetrical planar diode systems (EN)

Tsiogas, CD (EN)
Avaritsiotis, JN (EN)

N/A (EN)

A quantitative model for the reactive sputtering process in a symmetrical planar configuration is presented which takes specific system geometry into consideration. Scattering effects have been included using a Monte Carlo approach. The model allows for the calculation of the radial compositional distribution of the growing film as a function of the distance between the target and the condensation surface, further to the simulation of the well-known hysteresis effect and its consequences in the composition of the deposited film. One of the main features of the proposed model is that it offers the possibility of introducing a reactive gas profile across the reaction zone (instead of considering it to be constant), to account for the gettering action of both target and condensation surface at relatively high sputtering rates and short target-to-substrate separations. Calculated results concerning system stability have been found to be in good qualitative agreement with experimental results published in the literature. © 1992. (EN)

journalArticle

Mathematical Statistics--Monte Carlo Methods (EN)
Films--Preparation (EN)
Reactive Sputtering (EN)
Process Model (EN)
Semiconductor Diodes (EN)
Planar Diode Systems (EN)
Metals And Alloys (EN)

Εθνικό Μετσόβιο Πολυτεχνείο (EL)
National Technical University of Athens (EN)

Thin Solid Films (EN)

Αγγλική γλώσσα

1992


ELSEVIER SCIENCE SA LAUSANNE (EN)



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