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Electronic structure and band - gap study of Si1-xCx

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Electronic structure and band - gap study of Si1-xCx (EN)
Xanthakis, JP (EN)
journalArticle (EN)
2014-03-01T01:09:23Z
1993 (EN)
The electronic structure of Si1-xCx has been calculated, in the region x > 0.5 in terms of x, the ratio of sp2 sites a and the short-range order parameters. By comparing Eg(x) to the experimental gaps we deduce that in the low hydrogenation limit the material is close to chemical order and that for high a, Eg (x) displays a hump, whereas at low a it is monotonic. © 1993. (EN)
Materials Science, Ceramics (EN)
Materials Science, Multidisciplinary (EN)
Electronic Structure (EN)
Band structure (EN)
Electronic properties (EN)
Chemical order (EN)
Electronic structure (EN)
Silicon carbide (EN)
Band Gap (EN)
Solid state physics (EN)
Amorphous materials (EN)
Band gap (EN)
Low hydrogenation limit (EN)
Journal of Non-Crystalline Solids (EN)
English
ELSEVIER SCIENCE BV (EN)
National Technical University of Athens
Digital Library of National Technical University of Athens | Dspace@NTUA
Κεντρική Βιβλιοθήκη Ε.Μ.Π.
Ιδρυματικό Αποθετήριο
Δημοσιεύσεις μελών Δ.Ε.Π. σε περιοδικά



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