Electronic structure and band - gap study of Si1-xCx

 
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Journal part (EN)
Scientific article (EN)
1993 (EN)
Electronic structure and band - gap study of Si1-xCx (EN)
Xanthakis, JP (EN)
The electronic structure of Si1-xCx has been calculated, in the region x > 0.5 in terms of x, the ratio of sp2 sites a and the short-range order parameters. By comparing Eg(x) to the experimental gaps we deduce that in the low hydrogenation limit the material is close to chemical order and that for high a, Eg (x) displays a hump, whereas at low a it is monotonic. © 1993. (EN)
journalArticle (EN)
Electronic Structure (EN)
Band structure (EN)
Electronic properties (EN)
Band Gap (EN)
Materials Science, Ceramics (EN)
Materials Science, Multidisciplinary (EN)
Solid state physics (EN)
Amorphous materials (EN)
Chemical order (EN)
Electronic structure (EN)
Silicon carbide (EN)
Band gap (EN)
Low hydrogenation limit (EN)
National Technical University of Athens
Digital Library of National Technical University of Athens | Dspace@NTUA
Κεντρική Βιβλιοθήκη Ε.Μ.Π.
Ιδρυματικό Αποθετήριο
Δημοσιεύσεις μελών Δ.Ε.Π. σε περιοδικά
Journal of Non-Crystalline Solids (EN)
English
1993 (EN)
http://hdl.handle.net/123456789/10948
1019 (EN)
1022 (EN)
164-166 (EN)
PART 2 (EN)
0022-3093 (EN)
ISI:A1993MT78200090 (EN)
10.1016/0022-3093(93)91171-X (EN)
ELSEVIER SCIENCE BV (EN)



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